Published April 2012 | Version v1
Journal article Metadata-only

Effect of γ-ray radiation on electrical properties of heat-treated TbxSn1−xSe single crystals

Creators

  • 1. Azerbaijan State Pedagogical University (Azerbaijan)

Description

The effect of γ-ray radiation on the electrical properties of heat-treated Tb0.01Sn0.99Se (sample 1) and Tb0.05Sn0.95Se (sample 2) samples is studied. It is found that, as a result of irradiation with γ-ray 1.25-MeV photons, the charge-carrier concentration decreases in the temperature range T = 77−200 K by 17 and 6.3% for samples 1 and 2, respectively. It is assumed that, in the course of irradiation with γ-ray photons, terbium impurity atoms are located between sites of the crystal lattice; in addition, Frenkel defects are formed.

Additional details

Identifiers

DOI
10.1134/S1063782612040082;

Publishing Information

Journal Title
Semiconductors
Journal Volume
46
Journal Issue
4
Journal Page Range
p. 430-432
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43129388
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE CARRIERS; CRYSTAL LATTICES; ELECTRICAL PROPERTIES; FRENKEL DEFECTS; HEAT TREATMENTS; IMPURITIES; IRRADIATION; MONOCRYSTALS; PHOTONS; TEMPERATURE RANGE; TERBIUM
Descriptors DEC
BOSONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; MASSLESS PARTICLES; METALS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE EARTHS; VACANCIES

Optional Information

Copyright
Copyright (c) 2012 Pleiades Publishing, Ltd.