Published January 4, 2010 | Version v1
Journal article Metadata-only

Intraminiband Relaxation In Doped GaAs/AlGaAs Superlattices Studied By Two-Color Infrared Pump-Probe Experiments

Creators

  • 1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
  • 2. Solid State Electronics Institute, Micro- and Nanostructure Center, TU Wien, Floragasse 7, 1040 Vienna (Austria)

Description

In this work we report on two-color pump-probe measurements to investigate the intraminiband dynamics of doped GaAs/AlGaAs superlattices with different miniband widths smaller or larger than the optical phonon energy. For a miniband with a width larger than the optical phonon energy we found a fast relaxation, independent of the excitation intensity. For narrow minibands this relaxation takes longer and shows a strong temperature and intensity dependence.

Additional details

Identifiers

DOI
10.1063/1.3295369;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1199
Journal Issue
1
Journal Page Range
p. 203-204
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
29. international conference on the physics of semiconductors
Dates
27 Jul - 1 Aug 2008
Place
Rio de Janeiro (Brazil)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41101848
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRONIC STRUCTURE; EXCITATION; FREE ELECTRON LASERS; GALLIUM ARSENIDES; PHONONS; PROBES; RELAXATION; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TEMPERATURE DEPENDENCE
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LASERS; MATERIALS; PNICTIDES; QUASI PARTICLES

Optional Information

Notes
(c) 2009 American Institute of Physics