Published September 1980
| Version v1
Journal article
Theory of deep substitutional sp3-bonded impurity levels and core excitons at semiconductor interfaces
- 1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Description
A theory of the major chemical trends in the binding energies of deep substitutional sp3-bonded impurity levels and Frenkel core excitons at interfaces is presented and applied to a GaAs/AlAs (110) interface
Additional details
Publishing Information
- Journal Title
- J. Vac. Sci. Technol.
- Journal Volume
- 17
- Journal Issue
- 5
- Series
- J. Vac. Sci. Technol.
- Journal Page Range
- 993-996
- ISSN
- 0022-5355
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12573248
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; BAND THEORY; BINDING ENERGY; CHEMICAL COMPOSITION; ELECTRONIC STRUCTURE; ENERGY LEVELS; EXCITONS; FRENKEL DEFECTS; GALLIUM ARSENIDES; HAMILTONIANS; IMPURITIES; INTERFACES; LCAO METHOD; PERTURBATION THEORY; VALENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; GALLIUM COMPOUNDS; MATHEMATICAL OPERATORS; POINT DEFECTS; QUANTUM OPERATORS; QUASI PARTICLES; VACANCIES