Published January 3, 2006 | Version v1
Journal article

Structures and electrochromic properties of Ta0.3W0.7O x thin films deposited by pulsed laser ablation

  • 1. Integrated Manufacturing Technologies Institute, National Research Council Canada, 800 Collip Circle, London, ON, N6G 4X8 (Canada)

Description

Electrochromic materials based on mixed metal oxides are of growing importance since improved durability, coloration efficiency and chemical stability, as well as a desirable neutral color could be accomplished in those multicomponent films. In this work, we have used the pulsed laser deposition technique to deposit thin films of Ta0.3W0.7O x on ITO-coated glass substrates in reactive O2 gas environment at a substrate temperature range of 200 to 700 oC. X-ray diffraction results showed that Ta0.3W0.7O x films begin to crystallize to a cubic phase at substrate temperatures near 700 oC, while films with amorphous structure were obtained at lower substrate temperatures. The lattice constants of the polycrystalline films are similar to those of stoichiometric Ta0.3W0.7O2.85 bulk materials. Optical transmittance of Ta0.3W0.7O x films decreases as the O2 pressures during deposition decreasing from 5.32 Pa to 0.13 Pa. Electrochromic properties of the Ta0.3W0.7O x films were evaluated in 0.1 M H3PO4 electrolyte and the results were compared to those of WO3 and Ta0.1W0.9O x films deposited also by pulsed laser ablation. The results have demonstrated that the addition of one metal oxide (e.g., Ta2O5) into another (e.g., WO3) is an effective way to alter the electrochromic properties of the individual constituents

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.07.169;
PII
S0040-6090(05)01036-9;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
494
Journal Issue
1-2
Journal Page Range
p. 28-32
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
International conference on metallurgical coatings and thin films
Acronym
ICMCTF 2005
Dates
2-6 May 2005
Place
San Diego, CA (United States)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.