Published 1999
| Version v1
Book
Ground state and high pressure studies of MgTe by first principle electronic structure calculations
Creators
- 1. S.N. Bose National Centre for Basic Sciences, Calcutta (India)
Description
In this paper the results of the electronic band structure and structural properties of MgTe using the tight-binding linear Muffin-Tin orbital method are presented
Additional details
Publishing Information
- Publisher
- Universities Press
- Imprint Place
- Hyderabad (India)
- ISBN
- 81 7371 198 4
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 41
- Imprint Pagination
- 551 p.
- Journal Page Range
- p. 352-353
Conference
- Title
- 41. DAE solid state physics symposium
- Dates
- 27-31 Dec 1998
- Place
- Kurukshetra (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 31013520
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; ELECTRONIC STRUCTURE; ENERGY LEVELS; FERMI LEVEL; MANGANESE TELLURIDES; MUFFIN-TIN POTENTIAL; VERY HIGH PRESSURE
- Descriptors DEC
- CHALCOGENIDES; ENERGY LEVELS; MANGANESE COMPOUNDS; POTENTIALS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 10 refs., 2 figs.