Published January 2004 | Version v1
Journal article Metadata-only

X-ray photoelectron spectroscopy analysis of the electron beam treated SiC films before and after hydrogen ion irradiation

Creators

  • 1. Sichuan Univ., Chengdu (China). Inst. of Nuclear Science and Technology, Key Laboratory for Radiation Physics and Technology of Ministry of Education

Description

SiC films deposited with rf magnetron sputtering followed by electron beam alloying were irradiated by hydrogen ion with an energy of 5 keV and a dose of 1 x 1018 ions/cm2. The x-ray photoelectron spectroscopy analysis was used to investigate the irradiation effects of hydrogen ion on SiC. The results show that hydrogen ion irradiation can cause preferential sputtering of component of SiC, and activated carbon can react chemically with hydrogen to form hydrocarbon species such as methane. The related mechanism is discussed

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
21
Journal Issue
1
Journal Page Range
p. 61-64
ISSN
0256-307X

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
36063612
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRON BEAMS; FILMS; HYDROCARBONS; HYDROGEN IONS; IRRADIATION; MAGNETRONS; SILICON CARBIDES; SPUTTERING; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; IONS; LEPTON BEAMS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; ORGANIC COMPOUNDS; PARTICLE BEAMS; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; SPECTROSCOPY