Published 2010
| Version v1
Journal article
Field-effect transistor based on ZnO:Li films
- 1. Institute for Physical Research NAS, Ashtarak (Armenia)
Description
Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and MgF2 fluoride film as a gate insulator were obtained. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin film field-effect transistors were studied. The mechanism of photoelectric amplification in the obtained thin-film field transistors is proposed.
Additional details
Publishing Information
- Journal Title
- Izvestiya National'noj Akademii Nauk Armenii. Fizika
- Journal Volume
- 45
- Journal Issue
- 6
- Journal Page Range
- p. 407-416
- ISSN
- 1025-5613
- CODEN
- IAAFF8
INIS
- Country of Publication
- Armenia
- Country of Input or Organization
- Armenia
- INIS RN
- 42053023
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- FIELD EFFECT TRANSISTORS; LITHIUM; MAGNESIUM FLUORIDES; ULTRAVIOLET RADIATION; ZINC
- Descriptors DEC
- ALKALI METALS; ALKALINE EARTH METAL COMPOUNDS; ELECTROMAGNETIC RADIATION; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; MAGNESIUM COMPOUNDS; METALS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 17 refs., 7 figs., 1tab.