Study of mechanical properties of Czochralski grown un-oxidized and oxidized silicon crystal

In this work hardness and bend strength of as-grown (cut, ground and polished) CZ-Czochralski grown) crystal and oxidized Si crystals have been investigated. The former shows variation of hardness with the crystallographic directions (directional hardness anisotropy about 37 %), whereas, the hardness of the oxidized crystals in un-oxidized and oxidized decreased with the heat treatment at a given temperature and time. However, the hardness of the un-oxidized samples is more temperature dependent than that of the oxidized samples, The hardness of un-oxidized heat treated at 600 deg. C is about 70 % of the room temperature hardness and that of the oxidized sample with oxide layer 0.55 Micro heat treated at 600 deg. C was 37 % of the room temperature hardness oxide free crystal). (author)