On behaviour of gold centers in silicon after thermo radiation treating

The combined thermo radiation treating of Si as was experimentally established lead to increasing of an efficiency of reordering of acceptor gold centers as compared with thermal annealing. It was shown that a rate of degradation and formation of the gold centers increases as a concentration defects growth. Simbathic variation of the acceptor gold centers was found being attributed to different gold atoms. The accelerating mechanism of reordering of the observed centers was considered. (author). 3 refs., 1 tab