Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors
Creators
- 1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
- 2. Australian Synchrotron, Clayton, Victoria 3168 (Australia)
- 3. Department of Nuclear Physics, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
Description
Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50In0.50P and Ga0.47In0.53As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50In0.50P are readily amorphized, GaP and GaAs remain almost undamaged and InAs and Ga0.47In0.53As exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 81
- Journal Issue
- 7
- Journal Page Range
- p. 075201-075201.9
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41098955
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; BINARY ALLOY SYSTEMS; CRYSTAL DEFECTS; ENERGY LOSSES; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GOLD IONS; HEAVY IONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; IRRADIATION; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SMALL ANGLE SCATTERING; TEMPERATURE RANGE 0273-0400 K; TERNARY ALLOY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOY SYSTEMS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; LOSSES; MATERIALS; MEV RANGE; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SCATTERING; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2010 The American Physical Society