Published 1998
| Version v1
Journal article
Rf sputtered TiO2 thin films modified by WO3
Creators
- 1. Department of Inorganic Chemistry, University of Mining and Metallurgy, Cracow (Poland)
- 2. Institute of Electronics, University of Mining and Metallurgy, Cracow (Poland)
Description
TiO2 thin films modified by WO3 were deposited by rf reactive sputtering from Ti-W metallic target. Tungsten content, W/(Ti+W) in TiO2-WO3 thin films varied from 0 to 0.5. Anatase polymorphic form was obtained in films with relatively high tungsten atomic ratio. The optical transmission spectra of as-sputtered and annealed samples confirmed the transformation from amorphous to polycrystalline state. High level of diffused transmission (10%) in the vicinity of the fundamental absorption edge was observed for annealed samples. (author)
Additional details
Publishing Information
- Journal Title
- Inzynieria Materialowa
- Journal Volume
- 19
- Journal Issue
- 4
- Journal Page Range
- p. 856-859
- ISSN
- 0208-6247
Conference
- Title
- 15. Physical Metallurgy and Materials Science Conference on Advanced Materials and Technology (AMT'98)
- Dates
- 17-21 May 1998
- Place
- Cracow - Krynica (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31002057
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; ANNEALING; MEETINGS; PHASE TRANSFORMATIONS; SPUTTERING; THIN FILMS; TITANIUM OXIDES; TUNGSTEN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; FILMS; HEAT TREATMENTS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SPECTRA; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AGH proj. 10.160.476
- Notes
- 7 refs, 5 figs