Published December 31, 2003
| Version v1
Journal article
Dislocation cores and their electronic states: partial dislocations in GaAs
Creators
Description
The electronic structures, as predicted by the local density approximation, of the glide set partial dislocations in GaAs are presented. The calculation reveal mid-gap states for both the 90 deg. and 30 deg. α-type partials, whereas the β-cores reveal states only slightly above the valance band energy
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2003.09.189;
- PII
- S092145260300824X;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 340-342
- Journal Issue
- 3-4
- Journal Page Range
- p. 1001-1004
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 22. international conference on defects in semiconductors
- Dates
- 28 Jul - 1 Aug 2003
- Place
- Aarhus (Denmark)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37000719
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CALCULATION METHODS; DENSITY; DISLOCATIONS; ELECTRONIC STRUCTURE; ENERGY LEVELS; GALLIUM ARSENIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; LINE DEFECTS; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.