Published June 19, 1979 | Version v1
Patent Open

Ge-semiconductor detectors with a p-implanted n+-contact

Creators

Description

P-implanted large-surface-detectors with improved properties can be produced by implantation of the n+-contact with relatively low dose and high energy. After an annealing process a nearly perfect lattice structure is obtained. By a subsequent p-implantation step with high dose and low energy, the surface restisivity can be reduced. The p+-contacts are obtained by B-implantation. (DG)

Availability note (English)

MF available from INIS under the Report Number; Available from Deutsches Patentamt, Muenchen (Germany, F.R.).

Abstract (German)

Die P-implantierten Grossflaechendetektoren mit verbesserten Eigenschaften werden erhalten, wenn der n+-Kontakt durch P-Implantation mit relativ geringer Dosis und hoher Energie erfolgt. Eine Temperung hinterlaesst eine weitgehend ausgeheilte Gitter-Struktur. Eine darauffolgende Zweit-P-Implantierung mit hoher Dosis und geringer Energie reduziert dann den Oberflaechenwiderstand. Die p+-Kontakte werden durch B-Implantation erhalten. (DG)

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Additional details

Additional titles

Original title (German)
GE-Halbleiterdetektoren mit P-implantiertem n

Publishing Information

Imprint Pagination
10 p.
IPC:
Int. Cl. H01L 31/06; G01T 1/24.
IPC
Int. Cl. H01L 31/06; G01T 1/24.
Patent number
DE patent document 2924569/A/

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
15014245
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BORON IONS; CONSTRUCTION; FABRICATION; GE SEMICONDUCTOR DETECTORS; ION BEAMS; ION IMPLANTATION; KEV RANGE 10-100; PHOSPHORUS IONS; PLANNING
Descriptors DEC
ATOMIC IONS; BEAMS; CHARGED PARTICLES; ENERGY RANGE; IONS; KEV RANGE; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS