Published 1999 | Version v1
Journal article Metadata-only

Microstrip detectors on N-silicon base

Creators

  • 1. NNTs 'Khar'kovskij fiziko-tekhnicheskij institut', Khar'kov (Ukraine)
  • 2. NITIP, Khar'kov (Ukraine)

Description

Parameters and construction of microstrip detectors fabricated on the base of Titanium-Magnesium factory in Zaporozhye, Ukraine are described. Their properties satisfy the requirements of modern experiments to microstrip detectors

Additional details

Additional titles

Original title (Russian)
Микростриповые детекторы на основе Н-кремния ZTMK

Publishing Information

Journal Title
Voprosy Atomnoj Nauki i Tekhniki. Seriya, Yaderno-Fizicheskie Issledovaniya (Teoriya i Ehksperiment)
Journal Issue
no.1/33/
Journal Page Range
p. 42-43
CODEN
VANIEK

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
33004404
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
DESIGN; EFFICIENCY; ELECTRICAL PROPERTIES; N-TYPE CONDUCTORS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
MATERIALS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS