L10 phase transition in FePt thin films via direct interface reaction

Lowering the L10 ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L10 ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L10 ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO2 substrates. The accelerated L10 ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L10 ordering process of the FePt films.