Published 2001 | Version v1
Miscellaneous Metadata-only

The effect of pressure on InGaAs/GaAs laser diodes

Creators

  • 1. Institute of Physics, Warsaw University of Technology, Warsaw (Poland)
  • 2. High Pressure Research Center, Warsaw (Poland)
  • 3. Uzgorod National University, Uzgorod (Ukraine)
  • 4. Institute of Electron Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001

Additional details

Publishing Information

Imprint Title
Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001
Imprint Pagination
146 p.
Journal Page Range
p. 91

Conference

Title
30. International School on Physics of Semiconducting Compounds Jaszowiec 2001
Dates
1-8 Jun 2001
Place
Ustron-Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33060157
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ARSENIDES; EFFECTIVE MASS; ELECTRONIC STRUCTURE; EMISSION SPECTRA; ENERGY GAP; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PRESSURE DEPENDENCE; QUANTUM MECHANICS; STRAINS; THRESHOLD CURRENT
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CURRENTS; ELECTRIC CURRENTS; EPITAXY; GALLIUM COMPOUNDS; MASS; MECHANICS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA

Optional Information