Buried high-resistance layers in silicon obtained by substoichiometric ion implantation of nitrogen

A methods of forming of buried high-resistance layers in silicon is described. This method is based on use of increased thermal stability of amorphous silicon prepared by ion implantation of nitrogen with doses below that required for stoichiometric Si3N4. Investigations using Rutherford back-scattering and channeling, transmission electron diffraction, sheet resistance and leakage current measurements were carry out. By means of N2+-implantation at an energy 230 keV and dose 5x1016 cm-2 with subsequent annealing at 900 deg C buried amorphous layers with specific resistance 106 Ωcm were obtained