Published March 1981 | Version v1
Journal article Metadata-only

Near-edge absorption in InP crystals irradiated with electrons

Creators

  • 1. Physics Institute, Erevan

Description

A study was made of the effects of irradiation with 50 MeV electrons and subsequent annealing. Measurements were made at 80 and 300 0K. A new absorption band at 1.0 eV was observed. This band was annealed at 280--360 0C

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond. (Engl. Transl.)
Journal Volume
15
Journal Issue
3
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
336-337

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13668308
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABSORPTION; ANNEALING; ELECTRON COLLISIONS; INDIUM PHOSPHIDES; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 10-100; PHYSICAL RADIATION EFFECTS
Descriptors DEC
COLLISIONS; ENERGY RANGE; HEAT TREATMENTS; INDIUM COMPOUNDS; MEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS