Published July 15, 2005
| Version v1
Journal article
New developments on FRAMs: [3D] structures and all-perovskite FETs
Creators
- 1. Earth Sciences Department, Cambridge University, Symetrix Centre for Ferroics, Downing Street, Cambridge CB2 3EQ (United Kingdom)
Description
A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.02.047;
- PII
- S0921-5107(05)00069-3;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 120
- Journal Issue
- 1-3
- Journal Page Range
- p. 6-12
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- 8. international symposium on ferroic domains
- Acronym
- ISFD-8
- Dates
- 24-27 Aug 2004
- Place
- Tsukuba (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37114594
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITORS; CERAMICS; DOMAIN STRUCTURE; FERROELECTRIC MATERIALS; GEOMETRY; NANOSTRUCTURES; PEROVSKITE; RANDOMNESS; WALLS
- Descriptors DEC
- DIELECTRIC MATERIALS; ELECTRICAL EQUIPMENT; EQUIPMENT; MATERIALS; MATHEMATICS; MINERALS; OXIDE MINERALS; PEROVSKITES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.