Published January 2008
| Version v1
Journal article
Positron annihilation study of PbWO4 crystal doped with Y2O3 at different concentration
Creators
- 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
- 2. Tongji University, Shanghai 200092 (China)
- 3. Shanghai University, Shanghai 200436 (China)
- 4. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)
Description
A study of vacancy-related defects in yttrium-doped PbWO4 with doping concentration of 0-1 mol% has been performed using X-ray diffraction and positron annihilation lifetime spectroscopy. It was found that the samples have vacancy-like defects that act as positron traps. Two main defect lifetime components were found in all samples, one at about 0.195 ns to 0.208 ns and the other about 0.408 ns to 0.735 ns. These defect trapping sites can be attributed to single Pb-site vacancies and interstitial oxygen ions, respectively. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssa.200723189Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applied Research
- Journal Volume
- 205
- Journal Issue
- 1
- Journal Page Range
- p. 173-176
- ISSN
- 0031-8965
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 39023846
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNIHILATION; BRIDGMAN METHOD; DOPED MATERIALS; EXPERIMENTAL DATA; INTERSTITIALS; LATTICE PARAMETERS; LEAD TUNGSTATES; LIFETIME; MONOCRYSTALS; OXYGEN IONS; POSITRON COLLISIONS; TETRAGONAL LATTICES; TRAPPING; TRAPS; VACANCIES; X-RAY DIFFRACTION; YTTRIUM ADDITIONS; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; COLLISIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; DATA; DIFFRACTION; INFORMATION; INTERACTIONS; IONS; LEAD COMPOUNDS; MATERIALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; POINT DEFECTS; REFRACTORY METAL COMPOUNDS; SCATTERING; TRANSITION ELEMENT COMPOUNDS; TUNGSTATES; TUNGSTEN COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Notes
- With 2 figs., 2 tabs., 28 refs.. SICI: 0031-8965(200801)205:1<173::AID-PSSA200723189>3.0.TX;2-A