Published October 2005 | Version v1
Journal article Metadata-only

Influence of ultrasonic treatment on electrophysical properties of HgMnTe and HgCdMnTe single crystals

Creators

  • 1. V.E. Lashkarev Institute of Semiconductor Physics, Kyiv (Ukraine)
  • 2. Yu. Fed'kovych Chernivtsi National University, Chernivtsi (Ukraine)

Description

The results of experimental and theoretical studies of how the ultrasonic (US) treatment (UST) and ultrasonic loading (USL) influence HgMnTe and HgCdMnTe semiconductor crystals are reported. This work aimed at obtaining the information about electrophysical characteristics specimens with various degree of structural perfection and elucidating the mechanisms of acoustically stimulated formation of defects in them in connection with the parameters of the US modes, i.e. a long UST and a USL

Additional details

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kiev)
Journal Volume
50
Journal Issue
no.10
Journal Page Range
p. 1145-1152
ISSN
0372-400X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
38011543
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; HALL EFFECT; MANGANESE COMPOUNDS; MERCURY COMPOUNDS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; TELLURIDES; ULTRASONIC WAVES
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SOUND WAVES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS