Published March 2006 | Version v1
Journal article Metadata-only

Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates

Creators

  • 1. P. N. Lebedev Physical Institute, RAS, Leninsky pr. 53, 119991 Moscow (Russian Federation)
  • 2. Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet (JKU) Linz, Altenberger Str. 69, 4040 Linz (Austria)
  • 3. Shubnikov Institute of Crystallography, RAS, Leninskii pr. 59, 119333 Moscow (Russian Federation)

Description

Structural (XRD and HRTEM) and optical properties of self-assembled CdSe quantum dots with ZnSe barriers have been grown by molecular beam epitaxy on GaAs and Si/Ge substrates. The results of XRD and HRTEM measurements showed that high-quality CdSe QD arrays embedded in ZnSe barriers could be grown on Si/Ge virtual substrates. It has been shown, that QD structures grown on different substrates exhibit comparable high luminescence efficiency at low temperatures. Two peaks were observed in cathodoluminescence (CL) spectra of some samples grown on Si/Ge and GaAs substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564155

Additional details

Identifiers

DOI
10.1002/pssc.200564155;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
3
Journal Page Range
p. 536-539
ISSN
1610-1634

Conference

Title
32. International symposium on compound semiconductors (ISCS-2005)
Dates
18-22 Sep 2005
Place
Rust (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37032403
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM SELENIDES; CATHODOLUMINESCENCE; CRYSTAL GROWTH; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE SPECTRA; X-RAY DIFFRACTION; ZINC SELENIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; SPECTRA; TEMPERATURE RANGE; ZINC COMPOUNDS

Optional Information

Notes
With 4 figs., 6 refs.. SICI: 1610-1634(200603)3:3<536::AID-PSSC200564155>3.0.TX;2-H