Published August 2015
| Version v1
Miscellaneous
The three-level ripples induced by femtosecond laser on a 6H-SiC single crystal and the formation mechansim
- 1. School of Material Science and Engineering, Jiangsu University, Zhenjiang (China)
- 2. Physics Department, Shanghai University, Shanghai (China)
Description
For controlling of the physical properties of 6H-SiC as functional devices, microstructuring of 6H-SiC by femtosecond lasers has been intensively studied. In this paper, by a line-scanning laser irradiation at different velocities, the textured 6H-SiC surface progressively involved from first 200nm-period ripples, then 580nm-period ripples, and finally to 315nm ripples. The finite-difference-time-domain method(FDTD) was adopted to analyse the formation mechanism of the three-level ripples. (author)
Additional details
Identifiers
Publishing Information
- ISBN
- 978 0 64694 286 5
- Imprint Title
- International Conference on Laser Ablation 2015. Program Handbook
- Imprint Pagination
- 344 p.
- Journal Page Range
- vp.
- Report number
- INIS-AU--0090
Conference
- Title
- 13. International Conference on Laser Ablation
- Acronym
- COLA 2015
- Dates
- 31 Aug - 4 Sep 2015
- Place
- Cairns, QLD (Australia)
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 51102670
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EXPERIMENT DESIGN; LASERS; MICROSTRUCTURE; SCATTERING; SILICON CARBIDES; SIMULATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; SILICON COMPOUNDS
Optional Information
- Notes
- Introduction only entered in this record, 2 refs., 3 fig.