Published 2002
| Version v1
Journal article
Features of silicon detector radiation damage by high-energy electrons
Description
Experimental results of silicon radiation damaging efficiency by electromagnetic showers,which are developed from initial electrons with energy 220, 500 and 1000 MeV are presented. Peculiarity of damages creation in detector was studied. It was shown,that radiation damaging efficiency in the bulk detector material may be different that radiation damaging efficiency in initial silicon with identical characteristics
Additional details
Additional titles
- Original title (Russian)
- Особенности радиационного повреждения кремниевых детекторов высокоэнергетическими электронами
Publishing Information
- Journal Title
- Voprosy Atomnoj Nauki i Tekhniki. Fizika Radiatsionnykh Povrezhdenij i Radiatsionnoe Materialovedenie
- Journal Issue
- no.6
- Journal Page Range
- p. 53-58
- ISSN
- 0134-5400
- CODEN
- VAFMDP
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 34085473
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER DENSITY; CARRIER LIFETIME; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON BEAMS; LEAKAGE CURRENT; MEV RANGE 100-1000; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SI SEMICONDUCTOR DETECTORS; SILICON; STOICHIOMETRY
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; CURRENTS; DOSES; ELECTRIC CURRENTS; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; LIFETIME; MEASURING INSTRUMENTS; MEV RANGE; PARTICLE BEAMS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS