Published August 20, 2012 | Version v1
Journal article

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

  • 1. Institute of Applied Research, Vilnius University, Sauletekio Ave. 9 - III, Vilnius LT-10222 (Lithuania)
  • 2. Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063 Riga (Latvia)
  • 3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan (China)

Description

We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/38/1/012054

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
38
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1757-899X

Conference

Title
International conference on functional materials and nanotechnologies
Dates
17-20 Apr 2012
Place
Riga (Latvia)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44027474
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM NITRIDES; CARRIER LIFETIME; EPITAXY; EXCITATION; GALLIUM NITRIDES; LAYERS; RECOMBINATION; SAPPHIRE; SILICON; TIME RESOLUTION
Descriptors DEC
ALUMINIUM COMPOUNDS; CORUNDUM; CRYSTAL GROWTH METHODS; ELEMENTS; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LIFETIME; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; RESOLUTION; SEMIMETALS; TIMING PROPERTIES