Published August 20, 2012
| Version v1
Journal article
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
Creators
- 1. Institute of Applied Research, Vilnius University, Sauletekio Ave. 9 - III, Vilnius LT-10222 (Lithuania)
- 2. Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063 Riga (Latvia)
- 3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan (China)
Description
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/38/1/012054Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 38
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1757-899X
Conference
- Title
- International conference on functional materials and nanotechnologies
- Dates
- 17-20 Apr 2012
- Place
- Riga (Latvia)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44027474
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM NITRIDES; CARRIER LIFETIME; EPITAXY; EXCITATION; GALLIUM NITRIDES; LAYERS; RECOMBINATION; SAPPHIRE; SILICON; TIME RESOLUTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CORUNDUM; CRYSTAL GROWTH METHODS; ELEMENTS; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LIFETIME; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; RESOLUTION; SEMIMETALS; TIMING PROPERTIES