Published March 7, 2012 | Version v1
Journal article

Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films

  • 1. School of Material Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China)
  • 2. Department of Physics, Surface Physics Laboratory (National Key Laboratory) and Synchrotron Radiation Research Center of Fudan University, 220 Handan Road, Shanghai 200433 (China)
  • 3. Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2 (Canada)

Description

We report an investigation of the local electronic structure and thermal diffusion mechanism of Zn0.8Mn0.2O epitaxial films by soft x-ray spectroscopy measurements. According to experimental results and establishment of the relationship between electronic structure and magnetic properties, the majority of Mn atoms are in substitutional sites in the as-grown film and the concentration of divalent Mn ions is found to be dominant in the ferromagnetic film, while after being annealed at 400 °C for 1 h, Mn atoms diffuse out of the ZnO lattice and accumulate in Mn-related secondary phases with high valence (+3 and/or +4) Mn ions. The formation of the secondary phases is correlated with the suppressed ferromagnetism (FM). The present results suggest that Mn2+ ions play a significant role for the FM in (Zn,Mn)O. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/27/3/035012

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
27
Journal Issue
3
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET