Pressure and doping dependence of Hall effect and effective mass in V2O3

We present results of electrical resistivity and Hall effect measurements on single crystalline V2-yO3 as a function of temperature, pressure and doping y. The pressure dependence of the Hall effect suggests an interpretation in terms of spin fluctuations, which is also consistent with the temperature dependence of the electrical resistivity ρ. If a T2 fit is applied to ρ at low temperatures a saturation rather than a divergence of the corresponding effective mass results as the metal-insulator transition is approached