Published March 2005 | Version v1
Journal article Metadata-only

Accumulation of radiation-induced defects in gallium arsenides subjected to pulsed and continuous ion implantation

Creators

  • 1. Sibirskij Fiziko-Tekhnicheskij Inst. im. V.D. Kuznetsova pri Tomskom Gosudarstvennom Univ., Tomsk (Russian Federation)
  • 2. Tomskij Politekhnicheskij Univ., Tomsk (Russian Federation)

Description

Using the electric conductivity and Rutherford backscattering spectroscopy techniques an accumulation of defects induced in GaAs by both the room-temperature pulsed (τp=1.3x10-2 s, the duty factor 100) and continuous 32S-, 12C- and 4He-ions implantation in the ranges of energy 100-150 keV, implantation dose 1x109-6x1016 cm-2 and current density 1x10-9-3x10-6 A cm -2 has been studied. The rate of defects accumulation during pulsed implantation is shown to be substantially lower than during the continuous one

Abstract (Russian)

Методами электропроводности и резерфордовского обратного рассеяния исследовано накопление дефектов в GaAs при импульсной (τp=1.3x10-2 с, скважность 100) и непрерывной имплантации ионов 32S, 12C и 4He при комнатной температуре в диапазонах энергии 100-150 кэВ, дозы имплантации 1x109-6x1016 см-2 и плотности тока 1x10-9-3x10-6 A см -2. Показано, что при импульсной имплантации скорость накопления дефектов существенно меньше, чем при непрерывном облучении

Additional details

Additional titles

Original title (Russian)
Накопление радиационных дефектов в арсениде галлия при импульсном и непрерывном облучении ионами

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
39
Journal Issue
3
Journal Page Range
p. 313-315
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
38011507
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARBON 12 BEAMS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ENERGY SPECTRA; GALLIUM ARSENIDES; HELIUM 4 BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SULFUR 32 BEAMS; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; DOSES; ELECTRICAL PROPERTIES; ENERGY RANGE; FILMS; GALLIUM COMPOUNDS; ION BEAMS; KEV RANGE; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SPECTRA; SPECTROSCOPY

Optional Information

Notes
7 refs., 2 figs.