Defects of crystal structure of Hg1-xCdxTe thin layers growing by pulsed laser deposition

Hg1-xCdxTe layers have been obtained by pulsed laser deposition method using two types of lasers: YAG:Nd3+ (τ=250 μs or 40 ns) and excimer (τ=25 ns). The crystal structures of layers were investigated by the electron diffraction method. The dependence of the laser beam parameters on the layer structure was determined. Layers obtained were of various crystallography qualities (polycrystalline, monocrystalline). The layers with texture were more representative. Their diffraction patterns exhibit a rich symmetry, which points on a various orientation of nucleus of crystallisation. The proposed model of twins growing during deposition is under consideration. The influence of layer growing conditions on the size of the macroscopic defects was discussed too