Effects of Ni⁺ and Ar⁺ ions implantation on magnetic properties of C/Si thin film

The study of Ni⁺ and Ar⁺ ions effects on the magnetic properties of C/Si thin film was carried out. The Ni⁺ and Ar⁺ ions were implanted on C/Si thin up to the doses of 5 x 10¹⁶ ion/cm² Identification by XRD indicates Ni⁺ and Ar⁺ ion intensity of diffraction peaks for C (002) and Ni (010). The ion implantation could cause the decline in the peak intensity of C (002). The peak intensity of C (002) decreases with the increasing of dose, whereas, the peak intensity of Ni (010) increases with increasing of ion dose. These results indicate the occurrence of distribution of Ni atoms on the surface of C/Si thin film. Measurement of magnetic properties by VSM (Vibrating Sample Magnetometer) indicates a change in magnetic properties of carbon nano structures on a thin film with addition of implantation dose. These magnetic properties increase with the addition of Ni⁺ ion dose, as indicated by the increase in the values of M_s (saturated magnetization), M_r (remanent magnetization) and H_c (coercive field), i.e 28%, 21% and 42% respectively. Measurement of GMR with Four Point Probe also shows an increase in the value of MR of about 26% at 7.5 kOe magnetic field with increasing ion dose. (author)