Hardening mechanisms of nanocrystalline Ti-Al-N solid solution films
Creators
Description
Nanocrystalline Ti1-xAlxN (0≤x≤0.41) solid solution films were produced by reactive unbalanced close-field magnetron sputtering. Nanoindentation measurements showed that the hardness of Ti1-xAlxN films increased monotonously with the content of Al. A calculation based on a semiempirical method revealed that the effect of intrinsic hardening, which arises from the change of the nature of atomic bonding due to the incorporation of Al atoms into TiN lattice, played a negligible role in the observed hardening phenomena. Further analysis revealed that the grain boundary hardening was also very weak and the improvement of hardness of Ti1-xAlxN films with relatively low content of Al (x≤0.33) could be well explained by the Fleischer model of solid solution hardening. However, for Ti1-xAlxN films with x>0.33, an obvious deviation from the solid solution hardening was observed, probably due to the grain boundary segregation of solutes that might lead to an enhanced effect of grain boundary hardening when the amount of Al is high
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2004.05.087;
- PII
- S0040609004006728;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 468
- Journal Issue
- 1-2
- Journal Page Range
- p. 161-166
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36081537
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; CHEMICAL BONDS; FILMS; GRAIN BOUNDARIES; HARDENING; HARDNESS; MAGNETRONS; NANOSTRUCTURES; SOLID SOLUTIONS; SPUTTERING; TITANIUM COMPOUNDS; TITANIUM NITRIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; DISPERSIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; HOMOGENEOUS MIXTURES; MECHANICAL PROPERTIES; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MIXTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SOLUTIONS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.