Published November 2017
| Version v1
Journal article
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity
Creators
- 1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- 2. Institut für Festkörperphysik, Eugene–Wigner–Gebäude, Technische Universität Berlin (Germany)
Description
The results of numerical modeling and investigation of a hybrid microcavity based on a semiconductor Bragg reflector and a microlens selectively positioned above a single (111) In(Ga)As quantum dot are presented. Emitters based on the hybrid microcavity demonstrate the effective pumping of a single quantum dot and high emission output efficiency. The microcavity design can be used to implement emitters of polarization- entangled photon pairs based on single semiconductor quantum dots.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 51
- Journal Issue
- 11
- Journal Page Range
- p. 1399-1402
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49107302
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EMISSION; QUANTUM DOTS; QUANTUM ENTANGLEMENT; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS; NANOSTRUCTURES
Optional Information
- Copyright
- Copyright (c) 2017 Pleiades Publishing, Ltd.