Study of soft x-ray optical properties of niobium carbide (NbC) thin film in 60 – 150 Å wavelength region
- 1. Soft x-ray Application Laboratory, Raja Ramanna Centre for Advanced Technology, Indore-452 013 (India)
Description
Heterostructure have attracted a lot of interest in the field of researcher due to their enhanced potential applications which include Field effect transistor, photodetector, light emitting diodes,waveguides and control band gap by taking advantages of quantum size effect etc,. Heterostructure photodetector become more appealing by mixing different band gap devices and proper tuning enables the easy movement of charge carriers from valence band to conduction band. Many heterostructure have recently been fabricated and investigated including Au-graphene, graphene-MoS2, and Si-Ge which disclose many interesting optoelectronic properties. Synthesis of two different materials into heterostructure is important task that facilitate the properties to be enhanced and beyond the band gap of the material, finally creating high photo detection efficiency with superior performance. Our main focus was to synthesize and study the optoelectrical property of CdS-Bi2Te3 heterostructure. Our findings demonstrate that the absorption spectra of CdS and CdS- Bi2Te3 which depicts lower band gap and more light as compared to CdS thin film only. Further, CdS- Bi2Te3 films based heterostructure were found to be more photoconductive, with higher responsivity and greater E.Q.E, when compared to CdS due to incorporation of charge carrier from Bi2Te3 to CdS. (author)
Additional details
Publishing Information
- Publisher
- CSIR-National Physical Laboratory
- Imprint Place
- New Delhi (India)
- Imprint Title
- Proceedings of the seventeenth international conference on thin films: abstracts
- Imprint Pagination
- 236 p.
- Journal Page Range
- p. 89
Conference
- Title
- 17. international conference on thin films
- Acronym
- ICTF-2017
- Dates
- 13-17 Nov 2017
- Place
- New Delhi (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 52048027
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; GRADED BAND GAPS; GRAPHENE; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTOELECTRIC CELLS; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CARBON; DIRECT ENERGY CONVERTERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; NONMETALS; PHYSICAL PROPERTIES