Published 2017 | Version v1
Book

Study of soft x-ray optical properties of niobium carbide (NbC) thin film in 60 – 150 Å wavelength region

  • 1. Soft x-ray Application Laboratory, Raja Ramanna Centre for Advanced Technology, Indore-452 013 (India)

Description

Heterostructure have attracted a lot of interest in the field of researcher due to their enhanced potential applications which include Field effect transistor, photodetector, light emitting diodes,waveguides and control band gap by taking advantages of quantum size effect etc,. Heterostructure photodetector become more appealing by mixing different band gap devices and proper tuning enables the easy movement of charge carriers from valence band to conduction band. Many heterostructure have recently been fabricated and investigated including Au-graphene, graphene-MoS2, and Si-Ge which disclose many interesting optoelectronic properties. Synthesis of two different materials into heterostructure is important task that facilitate the properties to be enhanced and beyond the band gap of the material, finally creating high photo detection efficiency with superior performance. Our main focus was to synthesize and study the optoelectrical property of CdS-Bi2Te3 heterostructure. Our findings demonstrate that the absorption spectra of CdS and CdS- Bi2Te3 which depicts lower band gap and more light as compared to CdS thin film only. Further, CdS- Bi2Te3 films based heterostructure were found to be more photoconductive, with higher responsivity and greater E.Q.E, when compared to CdS due to incorporation of charge carrier from Bi2Te3 to CdS. (author)

Part of:
Proceedings of the seventeenth international conference on thin films: abstracts

Additional details

Publishing Information

Publisher
CSIR-National Physical Laboratory
Imprint Place
New Delhi (India)
Imprint Title
Proceedings of the seventeenth international conference on thin films: abstracts
Imprint Pagination
236 p.
Journal Page Range
p. 89

Conference

Title
17. international conference on thin films
Acronym
ICTF-2017
Dates
13-17 Nov 2017
Place
New Delhi (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
52048027
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BAND THEORY; GRADED BAND GAPS; GRAPHENE; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTOELECTRIC CELLS; SUBSTRATES; THIN FILMS
Descriptors DEC
CARBON; DIRECT ENERGY CONVERTERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; NONMETALS; PHYSICAL PROPERTIES

Optional Information