Published January 15, 1985
| Version v1
Journal article
Low-temperature ion beam mixing of Pt and Si markers in Ge
Creators
- 1. California Institute of Technology, Pasadena, California 91109
Description
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperatures between 6 and 500 K. The low-temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 46
- Journal Issue
- 2
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 154-156
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16067317
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOM TRANSPORT; DIFFUSION; GERMANIUM; IMPURITIES; ION COLLISIONS; KEV RANGE 100-1000; MIXING; PHYSICAL RADIATION EFFECTS; PLATINUM; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- COLLISIONS; ELEMENTS; ENERGY RANGE; KEV RANGE; METALS; NEUTRAL-PARTICLE TRANSPORT; PLATINUM METALS; RADIATION EFFECTS; RADIATION TRANSPORT; SEMIMETALS; TRANSITION ELEMENTS