Electron radiation effect upon the deformation on induced emf in n-GaAs - n-AlxGa1-xAs structures and p-n-transitions on the base of GaAs

The deformation-induced emf in the p-n-transitions on the base of FaAs, Si and Ge is investigated as well as the dose dependences of the emf on electron irradiation of n-GaAs - n-AlxGa1-xAs heterostructures and on p-n transitions in GaAs. The emerging emf has been shown to depend on the value and sign of the deformation coefficient of the semiconductor forbidden zone in which the p-n-transition is made. At exposure to electron radiation the emf uner measurement decreases in the case of p-n-transitions in FaAs and increases in the case of isotypic heterostructures due to defective centres that lead to a change in the deformation-induced emf relaxation time