Published December 4, 2020 | Version v1
Journal article Metadata-only

Wafer-scale graphene-ferroelectric HfO2/Ge–HfO2/HfO2 transistors acting as three-terminal memristors

Creators

  • 1. National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190 (Romania)
  • 2. Univ. of Bucharest, Physics Faculty, P.O. Box MG-11, 077125 Bucharest (Romania)
  • 3. National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele (Romania)
  • 4. National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)
  • 5. Academy of Romanian Scientists, 54 Splaiul Independentei, 050094 Bucharest (Romania)

Description

In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge–HfO2/HfO2 three-layer structure. This kind of transistor has a switching ratio of 103 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/abb2bf

Additional details

Identifiers

DOI
10.1088/1361-6528/abb2bf;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
31
Journal Issue
49
Journal Page Range
[10 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53021177
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CONTROL; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GRAPHENE; HAFNIUM OXIDES; LAYERS
Descriptors DEC
CARBON; CHALCOGENIDES; DIELECTRIC MATERIALS; ELEMENTS; HAFNIUM COMPOUNDS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS