Published December 2008 | Version v1
Journal article

Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

  • 1. School of Science, Shandong Jianzhu University, Jinan 250101 (China)

Description

We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/25/12/055

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
12
Journal Page Range
p. 4381-4384
ISSN
0256-307X
CODEN
CPLEEU