Published December 2008
| Version v1
Journal article
Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors
Creators
- 1. School of Science, Shandong Jianzhu University, Jinan 250101 (China)
Description
We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/25/12/055Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 25
- Journal Issue
- 12
- Journal Page Range
- p. 4381-4384
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44113087
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; FERROMAGNETIC MATERIALS; INTERFACES; METALS; ORGANIC SEMICONDUCTORS; POLARIZATION; SPIN; SPIN ORIENTATION
- Descriptors DEC
- ANGULAR MOMENTUM; CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; MAGNETIC MATERIALS; MATERIALS; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS