Layer by layer deposition of alternate carbon nanotubes and Ni films for efficient multilayer thin film temperature gauges
Creators
- 1. Department of Mechanical Engineering, National Institute of Technology Delhi, Delhi 110040 (India)
- 2. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)
- 3. Department of Chemical Engineering, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)
- 4. Department of Chemistry and the Institute of Nanotechnology, Bar-Ilan University, Ramat-Gan (Israel)
- 5. Department of Mechanical Engineering, Indian Institute of Technology Guwahati, Guwahati, 781039 (India)
Description
This study reports a novel approach for growing multilayer thin films consisting of alternate layers of carbon nanotubes (CNT) and nickel on Si (1 0 0) substrates and justifies their use in thin film temperature sensors. A low pressure chemical vapor deposition system was employed for synthesizing CNT films, while Ni films were deposited by electrodeposition. Porous-Si was used as substrate to increase adhesion between the layers of the multilayer structure. The structure of the multilayer films and the quality of the CNT grown were analyzed using several characterization methods, including scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray auger electron spectroscopy and Raman spectroscopy. The electrical characteristics were investigated using a van der Pauw setup and the effect of the increasing number of CNT layers in the multilayer structure was studied. The sensitivity of the multilayer film was found to increase with increasing number of CNT layers, despite the decrease of the temperature coefficient of resistance. On the other hand, the initial resistance was found to increase. Results indicated that these multilayer structures are appropriate for fabricating highly sensitive thin film gauges that can detect lower heat fluxes with more accuracy. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/aaf692Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 52
- Journal Issue
- 9
- Journal Page Range
- [8 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52051712
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; LAYERS; NICKEL; POROUS MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SENSITIVITY; SENSORS; SUBSTRATES; TEMPERATURE COEFFICIENT; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CARBON; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROLYSIS; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; LASER SPECTROSCOPY; LYSIS; MATERIALS; METALS; MICROSCOPY; NANOSTRUCTURES; NANOTUBES; NONMETALS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; REACTIVITY COEFFICIENTS; SPECTROSCOPY; SURFACE COATING; TRANSITION ELEMENTS