Published 1991
| Version v1
Report
Solid-state and materials research: solid state interaction in thin film structures. Epitaxial GeSi layers produced by solid phase epitaxial growth
Description
Short communication. 2 figs
Additional details
Publishing Information
- ISBN
- 1 8748 7703 3
- Imprint Title
- NAC annual report March 1991
- Imprint Pagination
- 129 p.
- Journal Page Range
- p. 63-64.
- Report number
- NAC-AR--91-01
INIS
- Country of Publication
- South Africa
- Country of Input or Organization
- South Africa
- INIS RN
- 24058182
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Progress Report, No Abstract, Non-conventional Literature
- Descriptors DEI
- ANNEALING; BACKSCATTERING; EPITAXY; GERMANIUM; GERMANIUM SILICIDES; LAYERS; PALLADIUM; PALLADIUM SILICIDES; PROGRESS REPORT; RUTHERFORD SCATTERING; SILICON; SUBSTRATES
- Descriptors DEC
- CRYSTAL GROWTH METHODS; DOCUMENT TYPES; ELASTIC SCATTERING; ELEMENTS; GERMANIUM COMPOUNDS; HEAT TREATMENTS; METALS; PALLADIUM COMPOUNDS; PLATINUM METALS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS