Ab initio calculation of electric field gradient and magnetic hyperfine field in Fe-doped SnO2
Creators
- 1. China Institute of Atomic Energy (China)
Description
Ab initio calculations of the magnetic and electric hyperfine fields and the magnetic moments were performed for the Fe doped SnO2 dilute magnetic semiconductors with the Wien2k code embodying the full-potential linearized augmented plane-wave method. The calculated results for the neutral system and the different charged state systems with and without the oxygen vacancy show clearly that the ground state is all magnetic and that the addition of electrons and the appearance of oxygen vacancy can increase the magnetic moment and the magnetic hyperfine field and reduce the electric hyperfine field. The energy level splitting of the Fe-3d orbit can lead to enhancing the magnetic moment and, therefore, a very large magnetic moment of 5 μB is obtained for the Sn15Fe1−O32 charged system
Additional details
Identifiers
Publishing Information
- Journal Title
- Hyperfine Interactions
- Journal Volume
- 231
- Journal Issue
- 1-3
- Journal Page Range
- p. 101-106
- ISSN
- 0304-3843
- CODEN
- HYINDN
Conference
- Title
- 5. joint international conference on hyperfine interactions; International symposium on nuclear quadrupole interactions
- Acronym
- HFI/NQI 2014
- Dates
- 21-26 Sep 2014
- Place
- Canberra (Australia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47037182
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; ELECTRIC FIELDS; ELECTRONS; GROUND STATES; IRON; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; ORBITS; OXYGEN; TIN OXIDES; VACANCIES; W CODES; WAVE PROPAGATION
- Descriptors DEC
- CHALCOGENIDES; COMPUTER CODES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; LEPTONS; MATERIALS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2015 Springer International Publishing Switzerland