Published 1981 | Version v1
Report

Charged particle ion-doped coordinate detector

Description

Ion-implanted charged particles detectors have been fabricated and tested. A series electron monocrystalline silicon of BKEhO brand having a specific resistance of 3000 and 1200 Ohmxcm and minority carrier lifetime of 400 and 700 μs was used as an initial material. Silicon water were doped over the whole surface with B11 ions of 20 and 120 keV at room temperature. The coordinate characteristics of the detectors measured using a 241Am source are given

Additional details

Additional titles

Original title (Russian)
Ионно-легированный координатный детектор заряженных частиц

Publishing Information

Imprint Title
Prospect materials and new methods for formation of active elements of semiconductor detectors
Imprint Pagination
50 p.
Journal Page Range
p. 47-49.
Report number
KIYI--81-9

Optional Information

Notes
4 refs.; 2 figs.; 1 tab. Imprint:Perspektivnye materialy i novye metody formirovaniya aktivnykh ehlementov poluprovodnikovykh detektorov.