Published 1981
| Version v1
Report
Charged particle ion-doped coordinate detector
Description
Ion-implanted charged particles detectors have been fabricated and tested. A series electron monocrystalline silicon of BKEhO brand having a specific resistance of 3000 and 1200 Ohmxcm and minority carrier lifetime of 400 and 700 μs was used as an initial material. Silicon water were doped over the whole surface with B11 ions of 20 and 120 keV at room temperature. The coordinate characteristics of the detectors measured using a 241Am source are given
Additional details
Additional titles
- Original title (Russian)
- Ионно-легированный координатный детектор заряженных частиц
Publishing Information
- Imprint Title
- Prospect materials and new methods for formation of active elements of semiconductor detectors
- Imprint Pagination
- 50 p.
- Journal Page Range
- p. 47-49.
- Report number
- KIYI--81-9
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 14717900
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BORON ADDITIONS; BORON 11; ELECTRIC CONDUCTIVITY; ENERGY RESOLUTION; ION IMPLANTATION; KEV RANGE 10-100; PERMITTIVITY; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- BORON ISOTOPES; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ENERGY RANGE; ISOTOPES; KEV RANGE; LIGHT NUCLEI; MEASURING INSTRUMENTS; NUCLEI; ODD-EVEN NUCLEI; PHYSICAL PROPERTIES; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; STABLE ISOTOPES
Optional Information
- Notes
- 4 refs.; 2 figs.; 1 tab. Imprint:Perspektivnye materialy i novye metody formirovaniya aktivnykh ehlementov poluprovodnikovykh detektorov.