The effect of selenization and post-annealing on the photoluminescence property of porous silicon

The effect of selenization and post-annealing treatment on the visible luminescence property of porous silicon has been investigated. Scanning electron microscopy and x-ray photon spectroscopy were employed to analyze the surface morphology and composition, respectively. Due to the passivation of Si–Se bonds on the surface, the photoluminescence intensity increases significantly with the increasing selenized temperature, and the photoluminescence stability is also improved after selenization. Furthermore, post-annealing of selenized porous silicon at appropriate temperature can enhance the photoluminescence behaviors