Published May 2015 | Version v1
Journal article

Potassium acceptor doping of ZnO crystals

  • 1. Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)
  • 2. Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

Description

ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM) at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV

Additional details

Identifiers

Publishing Information

Journal Title
AIP Advances
Journal Volume
5
Journal Issue
5
Journal Page Range
p. 057107-057107.7
ISSN
2158-3226
CODEN
AAIDBI

Optional Information

Notes
(c) 2015 Author(s)