Electrophysical properties of A³ B⁶ layered crystals and their ternary analogs radiated by γ-quantum and electrons

This thesis deals with the investigations results on radiative study of materials. In band gap of A³ B⁶ layered crystals and their ternary analogs there have been determined local level parameters, values of dielectric coefficients, the change of their electric properties under the influence of γ-quantum and current of electron is explained and the fields of application are revealed as well. By GaS single crystal radiation with the current of electrons with the rise of radiation dose in alternating current the dielectric coefficient increases and electric conduction decreases. In Ga-S radiated single crystals within f=5·10⁴-10⁷Hz at local levels near Fermi level the variable range hopping conduction has been taken place.