Radiation response of CMOS/SOI devices formed by wafer bond and etchback

The fabrication process and defect characteristics of thin-film SOI prepared by the bond and etchback process (BESOI) utilizing diamond machining and non-contact polishing were studied. MOS devices were fabricated and were characterized electrically before and after radiation exposure. Analysis by TEM shows that a defect-free film is produced by this BESOI process. CMOS devices show high-mobility and low leakage current (less than 1.0 pA/micron). These devices exhibited radiation responses of the top and edge oxide that are comparable to bulk devices. Positive charge trapping, and interface-trap generation, were -0.8 and 0.8V, respectively, at a dose of 10 Mrad(SiO/sub 2/)