Influence of additives upon Cu thin film growth on atomic-layer-deposited Ru layer and trench-filling by direct electrodeposition

Cu was electrodeposited directly on a 3-nm-thick atomic-layer-deposited (ALD) Ru diffusion barrier layer in Cu-citrate-based electrolytes for Cu interconnect. The nucleation and growth behavior of Cu thin films on the ALD Ru was compared between an additive-free electrolyte and a polyethylene glycol (PEG)/janus green B (JGB)-added electrolyte. The suppression effect of additives in the PEG/JGB-added electrolyte led to lower Cu deposition rate. It was accordingly responsible for the growth of thin and uniform Cu films from smaller Cu nuclei of higher area density. In consequence, Cu filling of 30-nm-wide and 120-nm-deep trenches coated by the 3-nm-thick ALD Ru layer was much improved in the PEG/JGB-added electrolyte compared with the additive-free electrolyte. - Highlights: • Seedless Cu electrodeposition on atomic-layer-deposited (ALD) Ru diffusion barrier. • Effect of additives on the surface morphology evolution of Cu thin films. • Nucleation and growth study of Cu thin films on the ALD Ru layer. • Cu filling of 30-nm-wide and 120-nm-deep trenches coated by the ALD Ru layer.