Dependence of charge multiplication on different design parameters of LGAD devices

The Low Gain Avalanche Detectors (LGADs) have the unique characteristic to provide amplification to the particle signal by using a controlled local avalanche mechanism. These devices are being explored by the HEP community because, while it is known that in standard silicon detectors the signal-to-noise ratio falls drastically with fluence, in LGAD devices this can be made sufficiently high to potentially overcome this problem. However, the existing irradiation studies show that at high fluences, the LGAD internal gain disappears and is no more significant. In this work, we have studied the effect of various design parameters of the LGAD device on its gain characteristic, at different irradiation levels. With the acquired understanding, we have also tried to tune the LGAD gain so to be suited for operation in a high radiation environment.