Biocompatibility and surface properties of hydrogenated amorphous silicon-germanium thin films prepared by LF-PECVD
Creators
- 1. Facultad de Ingeniería Eléctrica y Electrónica, Universidad Veracruzana, Veracruz, Boca del Río, Veracruz, México. (Mexico)
- 2. Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Veracruz, 94294, Boca del Río, Veracruz, México. (Mexico)
- 3. Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), C.P. 72840 Tonantzintla, Puebla, México. (Mexico)
- 4. Instituto de Fisiología, Benemérita Universidad Autónoma de Puebla, San Claudio, 72570, Puebla, Mexico. (Mexico)
Description
We studied the surface morphology and biocompatibility of hydrogenated amorphous silicon-germanium (a-Si1-xGex:H) thin films prepared by Low Frequency Plasma Enhanced Chemical Vapor Deposition (LF-PECVD). These films were deposited on a Corning 2947 glass substrate having a thickness of 3 μm, the electrical performance showed a decreased electrical resistance for low regime voltage. The root mean square (RMS) surface roughness of the films was measured by atomic force microscopy (AFM) in a non-contact mode. A biocompatibility tests was carried out using primary cultures of dorsal root ganglion (DRG) of Wistar rats. The DRG neurons were incubated for 18 hours on a-Si1-xGex:H thin films, and subsequent electrophysiological recording was performed. These neurons displayed typical ionic currents, including a fast-inward current at the beginning of voltage clamp pulse (Na+ current) and ensuing outward currents (K+ current). In current clamp experiments, depolarizing current pulse injection caused typical action potential discharge of the neurons. These results confirmed the feasibility of using a-Si1-xGex:H thin films as a biocompatible material. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/628/1/012003Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 628
- Journal Issue
- 1
- Journal Page Range
- [7 p.]
- ISSN
- 1757-899X
Conference
- Title
- 4. International Conference on Energy Materials and Applications
- Dates
- 11-13 May 2019
- Place
- Beijing (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53003578
- Subject category
- S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GERMANIUM; GLASS; HYDROGENATION; MORPHOLOGY; PERFORMANCE; PLASMA; POTASSIUM IONS; PULSES; SILICON; SODIUM IONS; SUBSTRATES; SURFACES; THIN FILMS
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; IONS; METALS; MICROSCOPY; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE COATING