Influence of recombination- and temperature-stimulated change of recombination centers' concentration on injection diffusion process

Diffusion injection conditions are discussed when recombination goes through the complex of shallow donor+vacancy type and recombination rate has saturation and then inhibition. That is caused by decreasing concentration of effective recombination centers. As a result, in the expression for distribution of nonequilibrium carrier concentrations the periodical members are arisen and that causes an appearance of additional periodical members in current-voltage characteristic. (authors)