Published 2013
| Version v1
Journal article
The influence of doping on the structure of chalcogenide glassy semiconductors As-Se-Te
- 1. ANAS, Institute of Physics, Baku (Azerbaijan)
Description
The Raman scattering (RS) of the thin films As-Se-Te doped by samarium, received thermal evaporation in a vacuum has been investigated. The basic structural units have been included in the amorphous matrix As-Se-Te and changes in the structure caused by doping have been established. The last has been explained by the chemical activity of samarium atoms as a result of destruction some share of existing structural elements Se-Se, Te-Te, As-As, Se-As-Se, Se-Te and with appearance the new connections As-Sm-As, Se-Sm-Se
Additional details
Additional titles
- Original title (Russian)
- Влияние легирования на структуру халкогенидных стеклообразных полупроводников Ас-Се-Те
Publishing Information
- Journal Title
- Vestnik Natsionalnogo Issledovatelskogo Yadernogo Universiteta «MEPhI»
- Journal Volume
- XXXIII
- Journal Issue
- 5
- Journal Page Range
- p. 80-85
- ISSN
- 2304-7453
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 45004930
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CHALCOGENIDES; CRYSTAL DOPING; CRYSTAL STRUCTURE; DATA ANALYSIS; EVAPORATION; EXPERIMENTAL DATA; MATRIX ELEMENTS; RAMAN EFFECT; SAMARIUM; SCATTERING; SEMICONDUCTOR MATERIALS; TELLURIUM; THERMAL ANALYSIS; THERMODYNAMIC ACTIVITY; THIN FILMS; VACUUM STATES
- Descriptors DEC
- DATA; ELEMENTS; FILMS; INFORMATION; MATERIALS; METALS; NUMERICAL DATA; PHASE TRANSFORMATIONS; RARE EARTHS; SEMIMETALS
Optional Information
- Notes
- Contains 2 figs; 30 refs
- Funding organization
- Azerbaijan National Academy of Sciences, Baku (Azerbaijan)